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| Philips Semiconductors Product specification Rectifier diodes Schottky barrier FEATURES * Low forward volt drop * Fast switching * Reverse surge capability * High thermal cycling performance * Low thermal resistance PBYR1045D series SYMBOL QUICK REFERENCE DATA VR = 40 V/ 45 V k tab a 3 IF(AV) = 10 A VF 0.57 V GENERAL DESCRIPTION Schottky rectifier diodes in a plastic envelope. Intended for use as output rectifiers in low voltage, high frequency switched mode power supplies. The PBYR1045D series is supplied in the surface mounting SOT428 package. PINNING PIN 1 2 3 tab DESCRIPTION no connection cathode1 anode SOT428 tab 2 cathode 1 3 LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER VRRM VRWM VR IF(AV) IFRM IFSM Peak repetitive reverse voltage Working peak reverse voltage Continuous reverse voltage Average rectified forward current Repetitive peak forward current Non-repetitive peak forward current Peak repetitive reverse surge current Operating junction temperature Storage temperature CONDITIONS PBYR10 Tmb 113 C square wave; = 0.5; Tmb 134 C square wave; = 0.5; Tmb 134 C t = 10 ms t = 8.3 ms sinusoidal; Tj = 125 C prior to surge; with reapplied VRRM(max) pulse width and repetition rate limited by Tj max - 65 MIN. 40D 40 40 40 10 20 100 110 1 150 175 MAX. 45D 45 45 45 UNIT V V V A A A A A C C IRRM Tj Tstg 1 It is not possible to make connection to pin 2 of the SOT428 package. July 1998 1 Rev 1.100 Philips Semiconductors Product specification Rectifier diodes Schottky barrier THERMAL RESISTANCES SYMBOL PARAMETER Rth j-mb Rth j-a Thermal resistance junction to mounting base Thermal resistance junction to ambient CONDITIONS PBYR1045D series MIN. - TYP. MAX. UNIT 50 2 K/W K/W pcb mounted, minimum footprint, FR4 board - ELECTRICAL CHARACTERISTICS Tj = 25 C unless otherwise specified SYMBOL PARAMETER VF IR Cd Forward voltage Reverse current Junction capacitance CONDITIONS IF = 10 A; Tj = 125C IF = 20 A; Tj = 125C IF = 20 A VR = VRWM VR = VRWM; Tj = 100C VR = 5 V; f = 1 MHz, Tj = 25C to 125C MIN. TYP. MAX. UNIT 0.5 0.74 0.65 0.2 22 350 0.57 0.8 0.84 1.3 35 V V V mA mA pF July 1998 2 Rev 1.100 Philips Semiconductors Product specification Rectifier diodes Schottky barrier PBYR1045D series 10 8 Forward dissipation, PF (W) Vo = 0.34 V Rs = 0.023 Ohms 0.2 PBYR1045D 0.5 Tmb(max) (C) D = 1.0 130 134 100 Reverse current, IR (mA) 125 C PBYR1045 10 100 C 6 4 0.1 138 1 75 C 50 C 0.1 142 I tp D= tp T 2 T t 146 150 15 0 0.01 0 Tj = 25 C 25 Reverse voltage, VR (V) 50 0 5 10 Average forward current, IF(AV) (A) Fig.1. Maximum forward dissipation PF = f(IF(AV)); square current waveform where IF(AV) =IF(RMS) x D. Forward dissipation, PF (W) Vo = 0.34 V Rs = 0.023 Ohms 8 6 4 2 0 4 2.8 2.2 1.9 PBYR1045D Tmb(max) (C) Fig.4. Typical reverse leakage current; IR = f(VR); parameter Tj 10 130 Cd / pF 1000 PBYR1045 a = 1.57 134 138 100 142 146 150 10 10 1 10 VR / V 100 0 2 4 6 8 Average forward current, IF(AV) (A) Fig.2. Maximum forward dissipation PF = f(IF(AV)); sinusoidal current waveform where a = form factor = IF(RMS) / IF(AV). PBYR1045 Fig.5. Typical junction capacitance; Cd = f(VR); f = 1 MHz; Tj = 25C to 125 C. 50 Forward current, IF (A) Tj = 25 C Tj = 125 C 10 Transient thermal impedance, Zth j-mb (K/W) 40 1 30 typ 20 max 0.1 P D tp tp T t 10 D= 0 T 0 0.2 0.4 0.6 0.8 1 Forward voltage, VF (V) 1.2 1.4 0.01 1us 10us 100us 1ms 10ms 100ms 1s 10s pulse width, tp (s) PBYR1045 Fig.3. Typical and maximum forward characteristic IF = f(VF); parameter Tj Fig.6. Transient thermal impedance; Zth j-mb = f(tp). July 1998 3 Rev 1.100 Philips Semiconductors Product specification Rectifier diodes Schottky barrier MECHANICAL DATA Dimensions in mm : Net Mass: 1.4 g seating plane 6.73 max 1.1 2.38 max 0.93 max 5.4 PBYR1045D series tab 4 min 6.22 max 10.4 max 4.6 2 1 3 0.5 min 0.3 0.5 0.5 0.8 max (x2) 2.285 (x2) Fig.7. SOT428 : centre pin connected to mounting base. MOUNTING INSTRUCTIONS Dimensions in mm 7.0 7.0 2.15 2.5 1.5 4.57 Fig.8. SOT428 : soldering pattern for surface mounting. Notes 1. Observe the general handling precautions for electrostatic-discharge sensitive devices (ESDs) to prevent damage to MOS gate oxide. 2. Epoxy meets UL94 V0 at 1/8". July 1998 4 Rev 1.100 Philips Semiconductors Product specification Rectifier diodes Schottky barrier DEFINITIONS Data sheet status Objective specification Product specification Limiting values PBYR1045D series This data sheet contains target or goal specifications for product development. This data sheet contains final product specifications. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. (c) Philips Electronics N.V. 1998 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. July 1998 5 Rev 1.100 |
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